ED15_3V
Industry Unique 0.15gm ED-pHEMT Technology: Gate Defined by 248nm DUV Stepper with Higher Throughput


ED15_3V is a low cost, optical lithography defined 0.15gm pHEMT process used for low noise and medium power applications in Ku-band through Ka-band (12-40GHz) applications. The process features a highly repeatable 0.15gm E-mode gate pHEMT FET coupled with high density capacitors, epi resistors, thin film resistors (TFR), and 2 layers of gold interconnects. With a typical Ft of 100 GHz, and NFmin < 0.4dB @ 12GHz, ED15 is suitable for WiFi 802.11ac integrated FEM, high frequency point-to-point radio, and 5G cellular applications. With a similar gate definition for D-mode pHEMT only, PD15 (0.15gm gate depletion mode) can deliver an excellent performance of NFmin < 0.45dB and Ga >13dB in Ku-band. This process is suitable for low cost LNB (Low Noise Block) amplifier and converter blocks in commercial direct broadcast satellite (DBS) dish systems. Simple to use, repeatable and highly competitive, ED15 is ideal for emerging consumer mmWave applications.

 

ED15_3V Device Specs:

 
Parameters
Unit
Spec
Application
Front End for WiFi (802.11ac),
LTE-A, 5G Cellular
D-pHEMT
Gate Length
gm
0.5
Idmax
mA/mm
450
Idss
mA/mm
250
Gm
mS/mm
400
Vp
V
-1.0
BVgd
V
14
Ron
Ohm-mm
1.1
fT
GHz
33
fMAX
GHz
90
E-pHEMT
Gate Length
μm
0.15
Idmax
mA/mm
530
Idss
mA/mm
0.0001
Gmmax
mS/mm
900
Vth
V
0.3
BVgd
V
14
Ron
Ohm-mm
1.0
fT
GHz
100
NFmin (6GHz)
dB
0.3
fMAX
GHz
120

 

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