Industry Unique 0.15£gm ED-pHEMT Technology: Gate Defined by 248nm DUV Stepper with Higher Throughput
ED15_3V is a low cost, optical lithography defined 0.15£gm pHEMT process used for low noise and medium power applications in Ku-band through Ka-band (12-40GHz) applications. The process features a highly repeatable 0.15£gm E-mode gate pHEMT FET coupled with high density capacitors, epi resistors, thin film resistors (TFR), and 2 layers of gold interconnects. With a typical Ft of 100 GHz, and NFmin < 0.4dB @ 12GHz, ED15 is suitable for WiFi 802.11ac integrated FEM, high frequency point-to-point radio, and 5G cellular applications. With a similar gate definition for D-mode pHEMT only, PD15 (0.15£gm gate depletion mode) can deliver an excellent performance of NFmin < 0.45dB and Ga >13dB in Ku-band. This process is suitable for low cost LNB (Low Noise Block) amplifier and converter blocks in commercial direct broadcast satellite (DBS) dish systems. Simple to use, repeatable and highly competitive, ED15 is ideal for emerging consumer mmWave applications.