技術-聯穎光電
聯穎在HBT, pHEMT, SAW濾波器以及高壓CMOS裝置上都提供廣泛的技術。憑藉聯電(UMC)的先進黃光微影技術,聯穎超越業界率先以深紫外線曝光機定義0.15μm 應變式高電子遷移率電晶體閘極 (pHEMT gate)
此創舉讓未來5G毫米波 單晶體微波積體電路產品得以高產量低成本方式大量生產 此外,此技術亦適用於4G/100G的光學通訊和5.8 GHz 802.11ac/ax 整合的前端模組應用。此先進的技術突破了以傳統電子束對0.15μm T-gate技術在產量及成本上的門檻。

 

Applications Frequency Device Technology
2-4G Cellular 730MHz ~ 3.8GHz HBT5, HBT2, HBT1, SH1, SH2
5G Celluar Sub 6GHz range: 3.3~3.8GHz, 5~6GHz. SH1,SH2, ED25, ED15
5G Celluar mmW range: 24/28/39GHz ED15, PiN Limiter
GPS L1: 1.575GHz; L2: 1.227GHz; L5: 1.176GHz ED25, ED15
BTS TRX 730MHz ~ 4.9GHz HBT5, HBT6, ED15, ED25, GS50
BTS Small Cell 730MHz ~ 4.9GHz HBT6, ED15, ED25, PA25 GA25
CATV 5MHz ~1GHz HBT6, SH1SH2
PtP 6-18, 23, 17-26, 28-29, 38-39, 60 GHz. ED15, ED25, PA25
Radar 8~60GHz PA25
WiFi FEM 2.4GHz, 5.8GHz. HBT1, SH1; SH2, ED25, ED15
WiFi PA 2.4GHz, 5.8GHz. HBT1, SH1, SH2
IoT

Unlicensed bands: 315, 433, 780, 868, 915, 920MHz; 2.4GHz/5.8GHz.

Licensed bands: 2G/3G/4G

HBT5, HBT2, HBT1, SH1, SH2

 

Applications Wavelength Device Technology
Optical Communication 850, 980nm PIN Diode, TIA(ED15)
Data Center 850, 980nm PIN Diode, TIA(ED15)