技術-聯穎光電

射頻與微波

GaAs pHEMT
ED15
  • Industry unique 0.15μm pHEMT gate defined by 248nm DUV stepper
  • Low noise and medium power applications in Ku/ Ka-band (12-40GHz) applications
  • High density MIM capacitors, epi resistors, thin film resistors (TFR) and 3 metal interconnect layers

特性

  • 0.15μm E-mode T-gate process
  • High ft (~100GHz)
  • Ultra low noise
  • High Gm (~880mS/ mm)
  • High throughput stepper defined gate process

應用

  • FEM for WiFi (802.11ac/ ax), LTE-A, 5G Cellular
  • FEM for High frequency (28~39GHz) PtP Radio
  • Ideal for emerging consumer mmWave applications

KrF DUV Stepper used to define 0.15μm gate

Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15μm pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.
ED25
  • 0.25μm E-mode T-gate with 3 metal interconnect layers
  • Precision resistors and high density MIM capacitors
  • Suitable for low noise and medium power mobile/ infrastructure applications
  • Highly reproducible threshold control

特性

  • 0.25μm E-mode T-gate process
  • NFmin < 0.4 dB at 6GHz
  • 3 layer metal interconnect
  • BVgd is up to 15V
  • Low defect density
  • Low-loss ESD solution

應用

  • LNA, Linear PA, RF Switch up to 6.0GHz, with 3V/ 5V operating voltage
  • Covering mobile & infrastructure applications
  • Small scale integration on logic designs
PA25
  • Excellent output power performance
  • Air bridge interconnect
  • High BVgd (>18V), Low Ron, high Efficiency operation @ Vds=8V supply

特性

  • 0.25μm D-mode T-gate process with Air Bridge
  • No power slump
  • High fT (~57 GHz) & fMax (~160 GHz)
  • Power density > 1,000 mW/ mm. (@10GHz)

應用

  • PA/ Gain Block for X/ Ku/ K/ Ka Bands
  • Phase array radar