互補式金屬氧化物半導體

GaN
GaN
  • DFET MISFET structure
  • High voltage operation (100V~600V)
  • Suitable for POL,Rail Traction,UPS,PV inverter,….

特性

  • 8um D-Gate
  • Low Ron (700 mohm-mm^2)
  • 3 layer metal interconnect
  • BVgd is up to 800V

應用

  • PFC
  • Adaptor
  • Solar cell inverter
  • Wireless charger