Technology

GaN

PG650
PG650
  • PDK to be released
  • E-mode power transistor
  • High Voltage application for 650V
  • LV E/ D-mode for GaN driver IC integration

Features

  • E-mode operation
  • High breakdown voltage (VBD): > 650V
  • Low on-resistance (Rds(on)): 150 mohm
  • Low gate charge (Qg): 2 nC

Applications

  • AC-DC, DC-DC Converter for applications:
  • Fast charge USB-PD
  • Datacom power supply
  • 48V Industrial power converter
  • EV/ HEV OBC and 48V converter
  • PV inverter
Parameter Unit PG650
Application - AC-DC, DC-DC Converter for applications:
Fast charge USB-PD, Datacom power supply, 48V Industrial power converter, EV/ HEV OBC and 48V converter, PV inverter
Device Type - E-mode
Vth V 1.9
IDSS μA 0.07
VBD V 650
Rds(on) mΩ 150
IGS μA 104

 

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