Technology

RF & Microwave

pHEMT

ED15
ED25
PA25

ED15	Industry unique 0.15μm pHEMT gate defined by 248nm DUV stepper Low noise and medium power applications in Ku/ Ka-band (12-40GHz) applications High density MIM capacitors, epi resistors, thin film resistors (TFR) and 3 metal interconnect layers

Features

0.15μm E-mode T-gate process
High ft (~100GHz)
Ultra low noise
High Gm (~880mS/ mm)
High throughput stepper defined gate process

Applications

FEM for WiFi (802.11ac/ ax), LTE-A, 5G Cellular
FEM for High frequency (28~39GHz) PtP Radio
Ideal for emerging consumer mmWave applications

KrF DUV Stepper used to define 0.15μm gate

Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15μm pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.

Applications

ED25	0.25μm E-mode T-gate with 3 metal interconnect layers Precision resistors and high density MIM capacitors Suitable for low noise and medium power mobile/ infrastructure applications Highly reproducible threshold control

Features

0.25μm E-mode T-gate process
NFmin < 0.4 dB at 6GHz
3 layer metal interconnect
BVgd is up to 15V
Low defect density
Low-loss ESD solution

Applications

LNA, Linear PA, RF Switch up to 6.0GHz, with 3V/ 5V operating voltage
Covering mobile & infrastructure applications
Small scale integration on logic designs

Applications

PA25	Excellent output power performance Air bridge interconnect High BVgd (>18V), Low Ron, high Efficiency operation @ Vds=8V supply

Features

0.25μm D-mode T-gate process with Air Bridge
No power slump
High fT (~57 GHz) & fMax (~160 GHz)
Power density > 1,000 mW/ mm. (@10GHz)

Applications

PA/ Gain Block for X/ Ku/ K/ Ka Bands
Phase array radar

Applications

No. 10, Innovation 1st Road, Hsinchu Science Park, Hsinchu County,Taiwan, R.O.C.

+886-3-5781259

© 2018 Wavetek Microelectronics Corporation. All Rights Reserved.