ED15
|
|
---|
Features
|
Applications
|
KrF DUV Stepper used to define .15 μm gate
Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15 um pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.
|
Parameter | Unit | ED15 | |
---|---|---|---|
Application | - | LNA/Gain Block/Switch for Applications: WiFi (802.11ac), LTE-A, 5G Cellular |
|
Device Type | - | E-mode | D-mode |
Gate Length | um | 0.15 | 0.5 |
Vth / Vp | V | 0.3 | -0.8 |
IDSS | mA/mm | 1.60E-04 | 250 |
IDMax | mA/mm | 570 | 450 |
GM | mS/mm | 880 | 400 |
VBDG | V | 12 | 14 |
Ron | Ohm‧mm | 1 | 1.1 |
NFmin (at 6GHz) | dB | 0.3 | - |
fT | GHz | 100 | 33 |
fMAX | GHz | 170 | 90 |
ED25
|
|
---|
Features
|
Applications
|
Parameter | Unit | ED25 | |
---|---|---|---|
Application | - | LNA/Gain Block/Switch for Applications: WiFi (802.11ac/ax), 5G sub_6GHz, GPS, Infrastructure |
|
Device Type | - | E-mode | D-mode |
Gate Length | um | 0.25 | 0.5 |
Vth / Vp | V | 0.3 | -0.8 |
IDSS | mA/mm | 1.00E-04 | 250 |
IDMax | mA/mm | 500 | 450 |
GM | mS/mm | 800 | 400 |
VBDG | V | 16 | 15 |
Ron | Ohm‧mm | 1.2 | 1.1 |
NFmin (at 6GHz) | dB | 0.4 | - |
fT | GHz | 70 | 33 |
fMAX | GHz | 120 | 90 |
ED50-10
|
|
---|
Features
|
Applications
|
Parameter | Unit | ED50-10 | |
---|---|---|---|
Application | - | For D-mode Broadband Linear PA, CATV | |
Device Type | - | E-mode | D-mode |
Gate Length | um | 0.5 | 0.5 |
Vth / Vp | V | 0.31 | -1.08 |
IDSS | mA/mm | 9.00E-05 | 241 |
IDMax | mA/mm | 198 | 460 |
GM | mS/mm | 493 | 286 |
VBDG | V | 10.2 | 10.89 |
Ron | Ohm‧mm | 2.8 | 3.48 |
NFmin (at 6GHz) | dB | - | - |
fT | GHz | 28 | 24 |
fMAX | GHz | 92 | 90 |
PA15
|
|
---|
Features
|
Applications
|
KrF DUV Stepper used to define .15 μm gate
Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15 um pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.
|
Parameter | Unit | PA15 |
---|---|---|
Application | - | PA/Gain Block for X/Ku/K/Ka Bands Applications |
Device Type | - | D-mode |
Gate Length | um | 0.15 |
Vth / Vp | V | -1.37 |
IDSS | mA/mm | 580 |
IDMax | mA/mm | 700 |
GM | mS/mm | 553 |
VBDG | V | ~13.4 |
Ron | Ohm‧mm | 0.7 |
NFmin (at 6GHz) | dB | - |
fT | GHz | 94 |
fMAX | GHz | 210 |
PA25
|
|
---|
Features
|
Applications
|
Parameter | Unit | PA25 |
---|---|---|
Application | - | PA/Gain Block for X/Ku/K/Ka Bands Applications |
Device Type | - | D-mode |
Gate Length | um | 0.25 |
Vth / Vp | V | -1.1 |
IDSS | mA/mm | 320 |
IDMax | mA/mm | 530 |
GM | mS/mm | 390 |
VBDG | V | >18 |
Ron | Ohm‧mm | 1.3 |
NFmin (at 6GHz) | dB | 0.6 |
(at 10GHz) | ||
fT | GHz | 57 |
fMAX | GHz | 160 |
PD15
|
|
---|
Features
|
Applications
|
KrF DUV Stepper used to define .15 μm gate
Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15 um pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.
|