Technology

RF & Microwave

pHEMT
ED15
  • Industry unique 0.15μm pHEMT gate defined by 248nm DUV stepper
  • Low noise and medium power applications in Ku/Ka-band (12-40GHz) applications
  • High density MIM capacitors, epi resistors, thin film resistors (TFR) and 3 metal interconnect layers

Features

  • 0.15um E-mode T-gate process
  • High ft (~100GHz)
  • Ultra low noise
  • High Gm (~880mS/mm)
  • High throughput stepper defined gate process

Applications

  • FEM for WiFi (802.11ac/ax), LTE-A, 5G Cellular
  • FEM for High frequency (28~39GHz) PtP Radio
  • Ideal for emerging consumer mmWave applications

KrF DUV Stepper used to define .15 μm gate

Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15 um pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.

ED15 Device Specs

Parameter Unit ED15
Application - LNA/Gain Block/Switch for Applications:
WiFi (802.11ac), LTE-A, 5G Cellular
Device Type - E-mode D-mode
Gate Length um 0.15 0.5
Vth / Vp V 0.3 -0.8
IDSS mA/mm 1.60E-04 250
IDMax mA/mm 570 450
GM mS/mm 880 400
VBDG V 12 14
Ron Ohm‧mm 1 1.1
NFmin (at 6GHz) dB 0.3 -
fT GHz 100 33
fMAX GHz 170 90

Applications

ED25
  • 0.25um E-mode T-gate with 3 metal interconnect layers
  • Precision resistors and high density MIM capacitors
  • Suitable for low noise and medium power mobile/infrastructure applications
  • Highly reproducible threshold control

Features

  • 0.25um E-mode T-gate process
  • NFmin < 0.4 dB at 6GHz
  • 3 layer metal interconnect
  • BVgd is up to 16V

Applications

  • LNA, Linear PA, RF Switch up to 6.0GHz, with 3V/5V operating voltage
  • Covering mobile & infrastructure applications
  • Small scale integration on logic designs

ED25 Device Specs

Parameter Unit ED25
Application - LNA/Gain Block/Switch for Applications:
WiFi (802.11ac/ax), 5G sub_6GHz, GPS, Infrastructure
Device Type - E-mode D-mode
Gate Length um 0.25 0.5
Vth / Vp V 0.3 -0.8
IDSS mA/mm 1.00E-04 250
IDMax mA/mm 500 450
GM mS/mm 800 400
VBDG V 16 15
Ron Ohm‧mm 1.2 1.1
NFmin (at 6GHz) dB 0.4 -
fT GHz 70 33
fMAX GHz 120 90

Applications

ED50-10
  • 0.5μm normal gate recess with E/D-Mode transistors integrated
  • Suitable for broadband applications through L/S/C/X bands, such as CATV

Features

  • 0.5um E/D-mode normal gate process
  • Good Gm performance under broadband (wide frequency) application

Applications

  • LNAs, PA, RF Switch for Broadband applications:Public Services: Teleworks, Education, Health. Home networking: CATV, IPTV, Entertainment: Gaming, Communications

ED50-10 Device Specs

Parameter Unit ED50-10
Application - For D-mode Broadband Linear PA, CATV
Device Type - E-mode D-mode
Gate Length um 0.5 0.5
Vth / Vp V 0.31 -1.08
IDSS mA/mm 9.00E-05 241
IDMax mA/mm 198 460
GM mS/mm 493 286
VBDG V 10.2 10.89
Ron Ohm‧mm 2.8 3.48
NFmin (at 6GHz) dB - -
fT GHz 28 24
fMAX GHz 92 90

Applications

PA15
  • 0.15µm D-mode T-gate with air bridge interconnect
  • Combines high power density and high gain performance.
  • Suitable for applications through Ku/K/Ka bands (12-40GHz) MMICs including Limiting Amplifiers, Driver Amplifiers, Differential Amplifiers and TIAs (Transimpedance Amplifiers)

Features

  • 0.15 μm D-mode T-gate process with Air Bridge
  • High power density ~900mW/mm @29GHz
  • High fT (~73 GHz) & fMax (~209 GHz)

Applications

  • Ku/K/Ka bands (12-40GHz) RF MMICs ( Limiting Amplifiers, Driver Amplifiers, Differential Amplifiers and TIAs)
  • Laser Driver Amplifiers

KrF DUV Stepper used to define .15 μm gate

Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15 um pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.

PA15 Device Specs

Parameter Unit PA15
Application - PA/Gain Block for X/Ku/K/Ka Bands Applications
Device Type - D-mode
Gate Length um 0.15
Vth / Vp V -1.37
IDSS mA/mm 580
IDMax mA/mm 700
GM mS/mm 553
VBDG V ~13.4
Ron Ohm‧mm 0.7
NFmin (at 6GHz) dB -
fT GHz 94
fMAX GHz 210

Applications

PA25
  • Excellent output power performance
  • Air bridge interconnect
  • High BVgd (>18V), Low Ron, high Efficiency operation @ Vds=8V supply

Features

  • 0.25μm D-mode T-gate process with Air Bridge
  • No power slump
  • High fT (~57 GHz) & fMax (~160 GHz)
  • Power density > 1,000 mW/mm. (@10GHz)

Applications

  • PA/Gain Block for X/Ku/K/Ka Bands
  • Phase array radar

PA25 Device Specs

Parameter Unit PA25
Application - PA/Gain Block for X/Ku/K/Ka Bands Applications
Device Type - D-mode
Gate Length um 0.25
Vth / Vp V -1.1
IDSS mA/mm 320
IDMax mA/mm 530
GM mS/mm 390
VBDG V >18
Ron Ohm‧mm 1.3
NFmin (at 6GHz) dB 0.6
(at 10GHz)
fT GHz 57
fMAX GHz 160

Applications

PD15
  • Industry unique 0.15μm pHEMT gate defined by 248nm DUV stepper
  • Excellent performance of NFmin < 0.45dB and Ga >13dB in Ku-band
  • Suitable for low cost LNB (Low Noise Block) amplifier and LNA/converter blocks in direct broadcast satellite (DBS) dish application

Features

  • 0.15um D-mode T-gate process
  • D-mode only
  • NFmin < 0.4dB, and Ga >13dB in Ku-band

Applications

  • LNB
  • Low noise & medium power LNA

KrF DUV Stepper used to define .15 μm gate

Leveraging UMC's advanced photolithography technology, Wavetek lead the industry in using DUV stepper to define 0.15 um pHEMT gate. This makes this technology suitable for future 5G mm-Wave MMIC available for high volume low cost production.

PD15 Device Specs

Parameter Unit PD15
Application - LNA for Ultra Low Noise Applications: LNB, MMICs
IDSS mA/mm 330
IDMax mA/mm 508
Vp V -0.78
Gmmax mS/mm 615
Ron Ohm.mm 0.84
fT GHz 88
fMAX GHz 214
NFmin (12 GHz) dB 0.45
Associate Gain dB 11.5

Applications

No. 10, Innovation 1st Road, Hsinchu Science Park, Hsinchu County,Taiwan, R.O.C.
+886-3-5781259
© 2018 Wavetek Microelectronics Corporation. All Rights Reserved.