技術-聯穎光電

技術發展

射頻與微波

GaAs HBT
SH1
  • High β HBT series
  • High frequency response, High linearity and PAE

特性

  • High β (~120)
  • High fT (~45GHz) & fMAX (~98GHz)
  • High Linearity
  • Low Ccb

應用

  • 4G/ 4.5G (LTE-FDD, LTE-TDD, LTE-A) mobile phone PA
  • WiFi (802.11ac/ ax) PA
  • Gain block

應用

SH2
  • High β HBT series
  • High frequency response, High linearity and PAE
  • Optimized ruggedness for High PAR applications

特性

  • High β (~120)
  • High fT (~42GHz) & fMAX (~98GHz)
  • High Linearity
  • Low Cbc
  • Optimized ruggedness for high PAR applications

應用

  • 4G/ 4.5G/ 5G (LTE-FDD, LTE-TDD, LTE-A) mobile phone PA
  • WiFi (802.11ac/ ax) PA
  • Gain block

應用

HBT1
  • Normal β HBT series
  • High linearity
  • Good RF performance & process stability for 3G cellular & WiFi PA

特性

  • Normal β (~75)
  • High Linearity

應用

  • 3G (WCDMA, CDMA2000)/ 4G (LTE-FDD, LTE-TDD) mobile phone PA
  • WiFi (802.11a/ b/ g/ n/ ac) PA

應用

HBT5
  • Normal β HBT series
  • High voltage operation (8-10V bias)
  • High ruggedness under high VSWR
  • Proven by more than 800Mu shipment tracing record of GSM PA

特性

  • Normal β (~75)
  • High BVceo (~18.5V) & BVcbo (~33V)
  • VSWR > 20:1 @5V bias

應用

  • 2G (GSM/ GPRS) mobile PA
  • Infrastructure driver amplifiers
  • IOT PA (800~900MHz)
  • Gain blocks

應用

HBT6
  • Normal β HBT series
  • High voltage operation (12V supply)
  • Suitable for small cell PAs & infrastructure driver amplifiers

特性

  • Normal β (~75)
  • High BVceo (~28V) & BVcbo (~55V)
  • Suitable for 12V bias operation

應用

  • High power PA for small-cell
  • Infrastructure driver amplifiers
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