技術-聯穎光電

技術發展

射頻與微波

GaN HEMT
GA25
  • PDK to be released
  • 0.25μm D-mode PA with 2 metal interconnect layers
  • Precision resistors and high density MIM capacitors
  • Suitable for small cell PAs & infrastructure power amplifiers

特性

  • 28V operation
  • Excellent output power performance

應用

  • infrastructure power amplifiers
  • Small cell PAs
GS50
  • PDK to be released
  • 0.5μm D-mode Switch with 2 metal interconnect layers
  • Precision resistors and high density MIM capacitors
  • Suitable for infrastructure TRx applications

特性

  • High Breakdown Voltage > 40V
  • Good Ron-Coff Performance

應用

  • infrastructure TRx power switch
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