技術發展

射頻與微波

GaAs HBT
SH1
  • High beta HBT series
  • High frequency response, High linearity and PAE
  • Optimized ruggedness for High PAR applications

特性

  • High β (~120)
  • High fT (~45GHz) & fMAX (~98GHz)
  • High Linearity
  • Low Ccb
  • Optimized ruggedness for high PAR applications

應用

  • 4G/4.5G (LTE-FDD, LTE-TDD, LTE-A) mobile phone PA
  • WiFi (802.11ac/ax) PA
  • Gain block

SH1 Device Specs

Parameter Unit SH1-10 SH1
Application - High Linearity PA/Gain Block for Mobile Applications:
WCDMA, WiFi (802.11a/b/g/n/ac), LTE/LTE-A
Current Gain - 124 125
BVceo V 13.9 12.5
BVcbo V 28.7 23
fT @3.6V GHz 41 45
fMAX @3.6V GHz 98 100

應用

SH2
HBT1
  • Normal beta HBT series
  • High linearity
  • Good RF performance & process stability for 3G cellular & WiFi PA

特性

  • Normal β (~75)
  • High Linearity

應用

  • 3G (WCDMA, CDMA2000) / 4G (LTE-FDD, LTE-TDD) mobile phone PA
  • WiFi (802.11a/b/g/n/ac) PA

HBT1 Device Specs

Parameter Unit HBT1
Application - High Linearity PA/Gain Block for Mobile Applications:
WCDMA, WiFi (802.11ac), LTE/LTE-A
Current Gain - 75
BVceo V 13.5
BVcbo V 24.5
fT @3.6V GHz 36
fMAX @3.6V GHz 93

應用

HBT5
  • Normal beta HBT series
  • High voltage operation (8-10V bias)
  • High ruggedness under high VSWR
  • Proven by more than 800Mu shipment tracing record of GSM PA

特性

  • Normal β (~75)
  • High BVceo (~18.5V) & BVcbo (~33V)
  • VSWR > 20:1 @5V bias

應用

  • 2G (GSM/GPRS) mobile PA
  • Infrastructure driver amplifiers
  • IOT PA (800~900MHz)
  • Gain blocks

HBT5 Device Specs

Parameter Unit HBT5
Application - High Ruggedness PA/Gain Block for Applications:
GSM/GPRS, Infrastructure Driver Amplifiers, IOT (800~900MHz)
Current Gain - 75
BVceo V 18.5
BVcbo V 33
fT @3.6V GHz 32
fMAX @3.6V GHz -

應用

HBT6
  • Normal beta HBT series
  • High voltage operation (12V supply)
  • Suitable for small cell PAs & infrastructure driver amplifiers

特性

  • Normal β (~75)
  • High BVceo (~28V) & BVcbo (~55V)
  • Suitable for 12V bias operation

應用

  • High power PA for small-cell
  • Infrastructure driver amplifiers

HBT6 Device Specs

Parameter Unit HBT6
Application - High Power PA for Applications:
Small-Cell, Infrastructure Driver Amplifiers
Current Gain - 75
BVceo V 28
BVcbo V 55
fT @3.6V GHz 20
fMAX @3.6V GHz -

 

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